ECE 4273/6273

MICROELECTRONICS DEVICE DESIGN

CATALOG DATA: ECE 4273/6273. Microelectronic Device Design. (3)

(Prerequisite: Grade of C or better in ECE 3243).

Three hours lecture. Theory of semiconductors in equilibrium and non-equilibrium, advanced theory of pn junctions, bipolar junction transistor and advanced theory and operation of field dependent devices.

PREREQUISITES BY TOPIC:

1. Introduction to semiconductor materials
2. Differential equations.
3. Simple transistor circuits.

TEXTBOOK(S) AND OTHER REQUIRED MATERIAL:

1. Yannis P. Tsividis, Operation and Modeling of the MOS Transistor, 2^nd Edition, McGraw-Hill, 1999

GENERAL COURSE OBJECTIVES AND RELATIONSHIP TO PROGRAM OBJECTIVES:

1. Develop a comprehensive understanding of the properties and characteristics of semiconductors. [1]
2. Develop an operational understanding of semiconductor junctions and the application to circuits under the SPICE simulation platform. [1]
3. Develop a comprehensive understanding of MOS devices and techniques necessary for analysis of advanced MOS transistor models. [1,2]
4. Relate models and device parameters by use of SPICE. [2]

TOPICS COVERED:

1. Semiconductor characteristics. (6 classes)
2. Characteristics of pn junctions. (7 classes)
3. Two-terminal MOS device characteristics. (9 classes)
4. Three-terminal MOS devices. (4 classes)
5. Four-terminal MOS device characteristics. (6 classes)
6. Advanced MOSFET device models and effects on simple circuits. (10 classes)
7. Quizzes. (3 classes)

CONTRIBUTIONS TO PROFESSSIONAL COMPONENT:

1. Engineering Science : 1 hour
2. Engineering Design : 2 hours
3. Basic Math and Science : 0 hours

ASSESSMENT:

1. Analytical homework.
2. Device assessment using spreadsheet (calculator) analysis.
3. Application assessments using SPICE.
4. Tests to include final test.

SPECIFIC COURSE OBJECTIVES AND RELATIONSHIP TO MEASUREABLE OUTCOMES:

Objective 1:

• By the end of the first 3 weeks section the student should be able to interpret semiconductor devices in terms of semiconductor characteristics. (1,2)

Objective 2:

• By the end of the first 5 weeks the student should be able to define semiconductor junctions in terms of their basic simulation parameters. (1,2,5)

Objective 3:

• By the end of the first 10 weeks the student should be able to analyze and define MOS 2-, 3-, and 4-terminal devices and apply to circuit simulations. (1,2,5)

Objective 4:

• By the end of the course the student should be able to apply advanced MOS transistor models to simple circuits and understand the effects of the high-field parameters on circuit performance. (1,2)

PREPARED BY:

Dr. Raymond S. Winton, Professor of Electrical and Computer Engineering, Sep 22, 2004