From ykoshka at ece.msstate.edu Tue Sep 1 17:22:48 2009 From: ykoshka at ece.msstate.edu (Yaroslav Koshka) Date: Tue Sep 1 17:22:50 2009 Subject: [ece4283] HW3 due coming Tue In-Reply-To: <00ec01ca25cf$3969e660$ac3db320$@msstate.edu> References: <00ec01ca25cf$3969e660$ac3db320$@msstate.edu> Message-ID: <008f01ca2b52$bca9aeb0$35fd0c10$@msstate.edu> Ladies and Gentlemen: The HW3 is due Tuesday, September 8. Study Ch 9 &10. p. 161 Prob 1-8. p.172 Prob 1,3,6,9 Have a good practice, -------------------------------------------- Yaroslav Koshka, PhD Associate Professor Emerging Materials Research Laboratory Dept of Electrical & Computer Engineering Mississippi State University PO Box 9571, 216 Simrall Hall, 406 Hardy Road Mississippi State, MS 39762 PHONE: (662)325-2411 FAX: (662)325-2298 YKoshka@ECE.MsState.Edu -------------------------------------------- From ykoshka at ece.msstate.edu Fri Sep 18 14:14:22 2009 From: ykoshka at ece.msstate.edu (Yaroslav Koshka) Date: Fri Sep 18 14:14:24 2009 Subject: [ece4283] HW4 Message-ID: <005201ca3894$3a8f3720$afada560$@msstate.edu> Ladies and Gentlemen, The HW4 is due coming Thursday, September 24. Study pages 269-273, 305-315. Submit your answer to the following problems Page 318 Problems 1-4,7-10 Additional problems (AP). Please type and print your answers for all problems requiring narrative answers. AP1: Explain (type) why the growth rate of Si epitaxial layers by CVD cannot be increased above a certain point. What limits our possibility to increase the growth rate? What is the outcome of the growth at too high growth rate and why? AP2: What growth conditions could you change (and in what direction) to make it possible to grow Si epitaxial layers with higher growth rate? (use your answer to AP1). AP3: Explain why epitaxial layers of Si and other semiconductor cannot be grown at room T when using CVD. AP4: Explain why different growth temperatures are used with different silicon growth precursors (e.g., SiH4, SiCl4, etc.) AP5: Refer to Fig17-7. Why the growth rate during Si epitaxial growth nearly saturates (does not change significantly) at higher temperatures. Have a good practice. Keep in mind that Test 1 is close and will be scheduled soon. Have a good practice, Yaroslav Koshka, PhD Associate Professor Emerging Materials Research Laboratory Dept of Electrical & Computer Engineering Mississippi State University PO Box 9571, 216 Simrall Hall, 406 Hardy Road Mississippi State, MS 39762 PHONE: (662)325-2411 FAX: (662)325-2298 YKoshka@ECE.MsState.Edu -------------------------------------------- -------------- next part -------------- An HTML attachment was scrubbed... URL: http://www.ece.msstate.edu/pipermail/ece4283/attachments/20090918/3d96b316/attachment.html